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  this is information on a product in full production. february 2013 doc id 024221 rev 1 1/19 19 STH320N4F6-2, sth320n4f6-6 n-channel 40 v, 1.1 m typ., 200 a, h2pak-2, h2pak-6 stripfet? vi deepgate? power mosfet datasheet ? production data features standard threshold drive 100% avalanche tested applications automotive switching applications description these devices are n-channel power mosfets developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfets exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order codes v ds r ds(on) max i d (1) 1. current limited by package. STH320N4F6-2 40 v 1.3 m 200 a sth320n4f6-6 h 2 pak-6 h 2 pak-2 1 2 tab 3 ta b 7 1 d(tab) g(1) s (2, 3 ) s c06140_h2pak-2-6 d(tab) g(1) s (2, 3 , 4, 5, 6, 7) h 2 pak-6 h 2 pak-2 table 1. device summary order codes marking package packaging STH320N4F6-2 320n4f6 h 2 pak-2 tape and reel sth320n4f6-6 h 2 pak-6 www.st.com
contents STH320N4F6-2, sth320n4f6-6 2/19 doc id 024221 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STH320N4F6-2, sth320n4f6-6 electrical ratings doc id 024221 rev 1 3/19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 40 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according r thj-c , current limited by package. drain current (continuous) at t c = 25 c 200 a i d (1) drain current (continuous) at t c = 100 c 200 a i dm (2) 2. pulse is rated according soa. drain current (pulsed) 800 a p tot total dissipation at t c = 25 c, 300 w derating factor 2 w/c i av avalanche current, repetitive or not-repetitive (pulse width limited by t j max ) 160 a e as single pulse avalanche energy (starting t j =25 c, i d =i av , v dd =35 v) 1100 mj t stg storage temperature -55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.5 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4 2 oz cu. thermal resistance junction-pcb max 35 c/w
electrical characteristics STH320N4F6-2, sth320n4f6-6 4/19 doc id 024221 rev 1 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 40 v i dss zero gate voltage drain current (v gs = 0) v ds = 40 v, v ds = 40 v, t c =125 c 1 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v, i d = 80 a 1.1 1.3 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 15 v, f = 1 mhz, v gs =0 - 13800 1870 1095 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v, i d = 160 a, v gs = 10 v (see figure 14) - 240 59 75.2 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 20 v, i d = 80 a r g = 4.7 , v gs = 10 v, (see figure 13) - 28 98 - ns ns t d(off) t f turn-off delay time fall time - 190 95 - ns ns
STH320N4F6-2, sth320n4f6-6 electrical characteristics doc id 024221 rev 1 5/19 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sd (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 200 800 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 80 a, v gs = 0 -1.1v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 160 a,di/dt = 100 a/s v dd = 32 v, t j = 25 c (see figure 15) - 58.7 99.2 3.38 ns nc a
electrical characteristics STH320N4F6-2, sth320n4f6-6 6/19 doc id 024221 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 1m s 100 s tj=175c tc=25c s ingle p u l s e 100 am15605v1 s ingle p u l s e 0.05 0.02 0.01 =0.5 k 10 t p ( s ) -4 10 - 3 10 -2 10 10 -1 10 -5 10 -2 -1 am15606v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 150 100 50 0 0 0.4 v d s (v) (a) 0.2 200 v g s = 4 v v g s = 5 v v g s = 6 v v g s = 7, 8 , 9, 10 v 0.6 0. 8 250 3 00 3 50 am15607v1 i d 150 100 50 0 2 4 v g s (v) 6 (a) 3 5 200 250 v d s = 1 v 3 00 3 50 400 am1560 8 v1 v g s 6 4 2 0 0 50 q g (nc) (v) 8 100 150 10 v dd =20v i d =160a v d s 12 200 250 am15609v1 r d s (on) 1.2 1.0 0. 8 0.6 0 40 i d (a) (m ) 20 60 1.4 1.6 8 0 1. 8 v =10 v g s am15610v1
STH320N4F6-2, sth320n4f6-6 electrical characteristics doc id 024221 rev 1 7/19 figure 8. capacitance variations figure 9. drain-source diode forward characteristics figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized b vdss vs temperature c 6100 4100 2100 100 0 20 v d s (v) (pf) 10 3 0 ci ss co ss cr ss 40 8 100 10100 12100 14100 16100 am15611v1 v s d 0 40 i s d (a) (v) 20 60 8 0 0. 3 0. 3 5 0.4 0.45 0.5 0.55 t j =-55c t j =25c t j =175c 0.6 0.65 0.7 0.75 0. 8 am15612v1 v g s (th) 0.6 0.4 0.2 0 -75 -25 t j (c) (norm) -50 0. 8 0 1 i d =250 a 1.2 75 50 100 25 125 150 am1561 3 v1 r d s (on) 0.6 0.4 0 t j (c) (norm) 0.2 -75 0 -50 75 -25 50 100 25 125 0. 8 150 1 1.2 1.4 1.6 1. 8 v g s =10v i d = 8 0a am15614v1 v d s -75 0 t j (c) (norm) -50 75 -25 50 100 0.92 0.94 0.96 0.9 8 1 1.02 i d = 1ma 25 125 1.04 1.06 150 1.0 8 1.1 am15615v1
test circuits STH320N4F6-2, sth320n4f6-6 8/19 doc id 024221 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STH320N4F6-2, sth320n4f6-6 package mechanical data doc id 024221 rev 1 9/19 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STH320N4F6-2, sth320n4f6-6 10/19 doc id 024221 rev 1 table 8. h2pak-2 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c1.17 1.37 e4.98 5.18 e0.50 0.90 f0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m2.6 2.9 r0.20 0.60 v0 8
STH320N4F6-2, sth320n4f6-6 package mechanical data doc id 024221 rev 1 11/19 figure 19. h2pak-2 drawing 8159712_c 8 159712_c
package mechanical data STH320N4F6-2, sth320n4f6-6 12/19 doc id 024221 rev 1 figure 20. h2pak-2 recommended footprint 8 159712_c
STH320N4F6-2, sth320n4f6-6 package mechanical data doc id 024221 rev 1 13/19 table 9. h2pak-6 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 e 0.45 0.60 f 0.50 0.70 h 10.00 10.40 h1 7.40 7.80 l 14.75 15.25 l1 1.27 1.40 l2 4.35 4.95 l3 6.85 7.25 l4 1.5 1.75 m 1.90 2.50 r 0.20 0.60 v0 8
package mechanical data STH320N4F6-2, sth320n4f6-6 14/19 doc id 024221 rev 1 figure 21. h2pak-6 drawing 8 15969 3 _rev_e
STH320N4F6-2, sth320n4f6-6 package mechanical data doc id 024221 rev 1 15/19 figure 22. h2pak-6 recommended footprint (dimensions in mm) 8 15969 3 _rev_e
packaging mechanical data STH320N4F6-2, sth320n4f6-6 16/19 doc id 024221 rev 1 5 packaging mechanical data table 10. tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
STH320N4F6-2, sth320n4f6-6 packaging mechanical data doc id 024221 rev 1 17/19 figure 23. tape figure 24. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history STH320N4F6-2, sth320n4f6-6 18/19 doc id 024221 rev 1 6 revision history table 11. document revision history date revision changes 01-feb-2013 1 first release.
STH320N4F6-2, sth320n4f6-6 doc id 024221 rev 1 19/19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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